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LH28F004SU-LC 데이터 시트보기 (PDF) - Sharp Electronics

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LH28F004SU-LC
Sharp
Sharp Electronics Sharp
LH28F004SU-LC Datasheet PDF : 31 Pages
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4M (512K × 8) Flash Memory
LH28F004SU-LC
PIN DESCRIPTION
SYMBOL
TYPE
NAME AND FUNCTION
A0 - A13 INPUT
WORD-SELECT ADDRESSES: Select a word within one 16K block. These
addresses are latched during Data Writes.
A14 - A18 INPUT
BLOCK-SELECT ADDRESSES: Select 1 of 32 Erase blocks. These addresses are
latched during Data Writes, Erase and Lock-Block operations.
DQ0 - DQ7
INPUT/OUTPUT
DATA INPUT/OUTPUT: Inputs data and commands during CUI write cycles.
Outputs array, buffer, identifier or status data in the appropriate Read mode.
Floated when the chip is de-selected or the outputs are disabled.
CE »
INPUT
CHIP ENABLE INPUT: Activate the device’s control logic, input buffers, decoders
and sense amplifiers. CE» must be low to select the device.
RP »
INPUT
RESET/POWER-DOWN: With RP » low, the device is reset, any current operation is
aborted and device is put into the deep power down mode. When the power is turned
on, RP » pin is turned to low in order to return the device to default configuration. When
the power transition has occurred, or the power on/off, RP» is required to stay low in
order to protect data from noise. When returning from Deep Power-Down, a recovery
time of 620 ns is required to allow these circuits to power-up. When RP» goes low,
any current or pending WSM operation(s) are terminated, and the device is reset. All
Status registers return to ready (with all status flags cleared). After returning, the
device is in read array mode.
OE »
INPUT
OUTPUT ENABLE: Gates device data through the output buffers when low. The
outputs float to tri-state off when OE» is high.
WE
INPUT
WRITE ENABLE: Controls access to the CUI, Data Queue Registers and Address
Queue Latches. WE is active low, and latches both address and data (command or
array) on its rising edge.
RY »/BY »
OPEN DRAIN
OUTPUT
READY/BUSY: Indicates status of the internal WSM. When low, it indicates that the
WSM is busy performing an operation. When the WSM is ready for new operation or
Erase is Suspended, or the device is in deep power-down mode RY»/BY » pin is floated.
VPP
SUPPLY
ERASE/WRITE POWER SUPPLY (3.0 V ±0.3 V): For erasing memory array blocks
or writing words/bytes into the flash array.
VCC
GND
SUPPLY
SUPPLY
DEVICE POWER SUPPLY (3.0 V ±0.3 V): Do not leave any power pins floating.
GROUND FOR ALL INTERNAL CIRCUITRY: Do not leave any ground pins floating.
NC
NO CONNECT: No internal connection to die, lead may be driven or left floating
3

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