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MAX4959 데이터 시트보기 (PDF) - Maxim Integrated

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MAX4959 Datasheet PDF : 17 Pages
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High-Voltage OVP with Battery Switchover
ELECTRICAL CHARACTERISTICS (continued)
(VIN = +19V, TA = -40°C to +85°C, unless otherwise noted, CVDD = 100nF. Typical values are at TA = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
GATE1 Leakage Current
G1ILKG VOVS > OVREF, VUVS < UVREF, or VCB = +5V
-1
+1
GATE2 Leakage Current
G2ILKG VCB = 0V
-1
+1
CB
Logic-Level High
Logic-Level Low
CB Pulldown Resistor
TIMING
VIH
VIL
RCBPD
1.5
0.4
1
2
3
Debounce Time
tDEB
VOVP > VIN > VUVP for greater than tDEB for
GATE1 to go low
10
25
40
UNITS
µA
µA
V
V
MΩ
ms
GATE1 Assertion Delay from
CB Pin
t1GATE
CB = +3V to 0
rise time = fall time = 5ns (Note 3)
50
ns
GATE2 Assertion Delay from
CB Pin
Blanking Time
MAX4960
SOURCE1/GATE1 Resistance
GATE1/Ground Resistance
t2GATE
tBLANK
CB = 0 to +3V
rise time = fall time = 5ns (Note 3)
RSG
RGG
(MAX4960)
GATE1 Asserted (MAX4960)
50
ns
10
25
40
ms
140
200
260
kΩ
140
200
260
kΩ
Note 1: Operation is tested at TA= +25°C and guaranteed by design for µDFN package. Operation over specified temperature range
is tested for µMAX package.
Note 2: Do not exceed absolute maximum rating; the ratio between the externally set OVLO and UVLO threshold must not exceed 4,
[OVLO/UVLO]MAX 4.
Note 3: Assertion delay starts from switching of CB pin to reaching of 80% of GATE1/GATE2 transition. This delay is measured without
external capacitive load.
Typical Operating Characteristics
(VOVLO = 22.2V and VUVLO = 10.1V, R1 = 887kΩ, R2 = 66.5kΩ, R3 = 54.9kΩ, all resistors 1%, OVREF = UVREF = 1.228V.)
POWER-UP RESPONSE
(RPULLUP = 1kΩ)
12
10
VIN
VGATE1
8
6
4
VDD
2
0
-2
-150 -100
-50 0 50
TIME (μs)
100 150
OVERVOLTAGE RESPONSE
(RPULLUP = 5kΩ)
30
VIN
25
20
15
VGATE1
10
VDD
5
0
-150 -100
-50 0 50
TIME (μs)
100 150
UNDERVOLTAGE RESPONSE
(WITHIN BLANKING TIME)
(RPULLUP = 1kΩ)
16
DRAIN OF P1
14
12
VIN
10
8
6
4 VGATE1
2
0
0 10 20 30 40 50 60 70
TIME (μs)
_______________________________________________________________________________________ 3

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