Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA,
VG2B = 2.3 Vdc, 728 - 768 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
120
—
W
IMD Symmetry @ 90 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
IMDsym
MHz
—
3
—
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature (2)
with 4.3 kΩ Gate Feed Resistors ( - 30 to 85°C)
VBWres
—
65
—
Stage 1
Stage 2
ΔIQT
—
0.012
—
—
0.031
—
MHz
%
Gain Flatness in 40 MHz Bandwidth @ Pout = 25 W Avg.
Gain Variation over Temperature
( - 30°C to +85°C)
GF
—
1.2
—
dB
ΔG
—
0.034
—
dB/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
ΔP1dB
—
0.005
—
dBm/°C
1. Measurement made with device in a Symmetrical Doherty configuration.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
MDE6IC7120NR1 MDE6IC7120GNR1
4
RF Device Data
Freescale Semiconductor