MRF5S9100NBR1 데이터 시트보기 (PDF) - Freescale Semiconductor

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MRF5S9100NBR1

880 MHz, 20 W AVG., 26 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

Freescale Semiconductor 

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model (per JESD22 - A114)

1C (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

3

260

°C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

IDSS

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)

IDSS

—

—

1

μAdc

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

—

1

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 400 μA)

VGS(th)

2

2.8

3.5

Vdc

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 950 mAdc)

VGS(Q)

—

3.7

—

Vdc

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 2.0 Adc)

VDS(on)

—

0.21

0.3

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 6 Adc)

gfs

—

7

—

S

Dynamic Characteristics (1)

Output Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

70

—

pF

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

2.2

—

pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 950 mA, Pout = 20 W Avg. N - CDMA, f = 880 MHz,

Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB

@ 0.01% Probability on CCDF

Power Gain

Gps

18

19.5

—

dB

Drain Efficiency

ηD

26

28

—

%

Adjacent Channel Power Ratio

ACPR

—

- 46.8

- 45

dBc

Input Return Loss

IRL

—

- 19

-9

dB

1. Part internally input matched.

MRF5S9100NR1 MRF5S9100NBR1

2

RF Device Data

Freescale Semiconductor

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