MRF5S21150HSR3 데이터 시트보기 (PDF) - Freescale Semiconductor

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MRF5S21150HSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor 

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M3 (Minimum)

Charge Device Model

C7 (Minimum)

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

—

1

μAdc

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

—

1

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 360 μAdc)

VGS(th)

2.5

—

3.5

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 1300 mAdc)

VGS(Q)

—

3.7

—

Vdc

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 3.6 Adc)

VDS(on)

—

0.26

0.3

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 3.6 Adc)

gfs

—

9

—

S

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

3.2

—

pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 33 W Avg., f1 = 2112.5 MHz,

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in

3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%

Probability on CCDF.

Power Gain

Gps

11

12.5

—

dB

Drain Efficiency

ηD

23

25

—

%

Intermodulation Distortion

IM3

- 37

- 35

dBc

Adjacent Channel Power Ratio

ACPR

—

- 39

- 37

dBc

Input Return Loss

IRL

—

- 12

-9

dB

1. Part internally matched both on input and output.

MRF5S21150HR3 MRF5S21150HSR3

2

RF Device Data

Freescale Semiconductor

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