MRF9030LSR1 데이터 시트보기 (PDF) - Freescale Semiconductor

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MRF9030LSR1

945 MHz, 30 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFET

Freescale Semiconductor 

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

IDSS

—

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)

IDSS

—

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 100 μAdc)

VGS(th)

2

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 250 mAdc)

VGS(Q)

—

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 0.7 Adc)

VDS(on)

—

Forward Transconductance

(VDS = 10 Vdc, ID = 2 Adc)

gfs

—

Dynamic Characteristics

Input Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Ciss

—

Output Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

Typ

—

—

—

2.9

3.8

0.19

3

49.5

26.5

1

Max

Unit

10

μAdc

1

μAdc

1

μAdc

4

Vdc

—

Vdc

0.4

Vdc

—

S

—

pF

—

pF

—

pF

(continued)

MRF9030LSR1

2

RF Device Data

Freescale Semiconductor

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