NX25P10 데이터 시트보기 (PDF) - Unspecified

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NX25P10

1M-BIT, 2M-BIT AND 4M-BIT Serial Flash Memory with 40MHz SPI

Unspecified 

1M / 2M / 4M-BIT SERIAL FLASH MEMORY with 40MHz SPI

NX25P10, NX25P20 AND NX25P40

Table 8. DC Electrical Characteristics (Preliminary) (1)

Symbol

Parameter

Conditions

Min

CIN(2)

Cout(2)

ILI

ILO

ICC1

ICC2

ICC3

ICC4

ICC5

ICC6

ICC7

VIL

VIH

VOL

VOH

Input Capacitance

Output Capacitance

Input Leakage

I/O Leakage

Standby Current

Power-down Current

Current Read Data 1MHz

Current Read Data 20MHz

Current Read Data 33MHz

Current Page Program

Current Write Status Register

Current Sector Erase

Current Bulk Erase

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

VIN = 0V(2)

VOUT = 0V(2)

CS = VCC, VIN = GND or VCC

CS = VCC, VIN = GND or VCC

C = 0.1VCC / 0.9 VCC DO = Open

C = 0.1VCC / 0.9 VCC DO = Open

C = 0.1VCC / 0.9 VCC DO = Open

CS = VCC

CS = VCC

CS = VCC

CS = VCC

–0.5

Vccx0.7

IOL = 1.6 mA

IOH = –100 µA

VCC–0.2

Typ Max Unit

6

1 pf

8

pf

±2

µA

±2

µA

25

50

2 µA

<1

5

µA

4

7

mA

10

14

14

18

3 mA

mA

15

20

mA

8

20

mA

15

25

4 mA

17

25

mA

Vccx0.3 V

Vcc +0.4 V

0.4

V5

V

Notes:

1. See Preliminary Designation.

2. Tested on sample basis and specified through design and characterization data. TA=25° C, Vcc 3V, Frequency 20MHz.

6

Table 9. AC Measurement Conditions

Symbol Parameter

Min

Max

Unit

CL

Load Capacitance

30

30

pF

TR, TF

Input Rise and Fall Times

5

ns

VIN

Input Pulse Voltages

0.2VCC to

0.8VCC

V

OUT

Output Timing Reference Voltages

0.3VCC to

0.7VCC

V

Note:

1. Output Hi-Z is defined as the point where data out is no longer driven.

Input Levels

0.8 Vcc

Input and Output

Timing Reference Levels

0.7 Vcc

0.2 Vcc

0.3 Vcc

Figure 18. AC Measurement I/O Waveform

7

8

9

10

11

12

NexFlash Technologies, Inc.

23

PRELIMINARY MKP-0009 Rev 6 NXSF040I-0405

04/04/05 ©

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