RT3P11M 데이터 시트보기 (PDF) - Isahaya Electronics

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RT3P11M

Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type

Isahaya Electronics 

RT3P11M

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Symbol

Parameter

Test conditions

V(BR)CEO

ICBO

hFE

VCE(sat)

VI(ON)

VI(OFF)

R1

R2/R1

fT

Collector to Emitter break down voltage

Collector cut off current

DC forward current gain

Collector to Emitter saturation voltage

Input on voltage

Input off voltage

Input resistor

Resistor ratio

Gain band width product

IC=-100μA,RBE=∞

VCB =-50V,IE=0

VCE=-5V,IC=-10mA

IC=-10mA,IB=-0.5mA

VCE=-0.2V,IC=-5mA

VCE=-5V,IC=-100μA

-

-

VCE=-6V,IE=10mA

Limits

Unit

Min

Typ

Max

-50

-

-

V

-

-

-0.1 μA

50

-

-

-

-

-0.1

-0.3

V

-

-1.5

-3.0

V

-0.8

-1.1

-

V

7

10

13

kΩ

0.9

1.0

1.1

-

-

150

-

MHZ

TYPICAL CHARACTERISTICS

-100

INPUT ON VOLTAGE

VS. COLLECTOR CURRENT

VCE=-0.2V

1000

DC FORWARD CURRENT GAIN

VS. COLLECTOR CURRENT

VCE=-5V

-10

100

-1

-1

-10

COLLECTOR CURRENT IC [mA]

-1000

COLLECTOR CURRENT

VS. INPUT OFF VOLTAGE

VCE=-5V

-100

10

-1

-10

COLLECTOR CURRENT IC [mA]

-100

-100

-10

-0.0 -0.4 -0.8 -1.2 -1.6 -2.0

INPUT OFF VOLTAGE VI(OFF) [V]

ISAHAYA ELECTRONICS CORPORATION

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