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SA482T67K65 데이터 시트보기 (PDF) - Silan Microelectronics

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SA482T67K65
Silan
Silan Microelectronics Silan
SA482T67K65 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BLOCK DIAGRAM
SA482X67K65
ABSOLUTE MAXIMUM RATING
Characteristics
Symbol
Drain-Gate Voltage (RGS=1M)
VDGR
Gate-Power (GND) Voltage
VGS
Drain Current PulsedŁ
IDM
Continuous Drain Current (Tamb=25°C)
ID
Continuous Drain Current (Tamb=100°C)
ID
Signal Pulsed Avalanche Energy(2)
EAS
Power Supply Voltage
VCC
Analog Input Voltage
VFB
Total Power Consumption
SA482P67K65
SA482T67K65
SA482P67K65
SA482T67K65
PD
Darting
Operating Junction Temperature
TJ
Operating Temperature
Tamb
Storage Temperature
Tstg
Note: 1. Pulse width is limited by maximum junction temperature.
2. L=51mH, starting Tj=25°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
Rating
650
±30
8.0
2.0
1.3
68
30
-0.3~ VSD
2.2
42
0.017
0.33
+160
-25~ +85
-55~+150
Unit
V
V
ADC
ADC
ADC
mJ
V
V
W
W/°C
°C
°C
°C
REV:1.4 2007.07.05
Page 2 of 7

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