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SM16GZ47 데이터 시트보기 (PDF) - Toshiba
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SM16GZ47
BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
Toshiba
SM16GZ47 Datasheet PDF : 5 Pages
1
2
3
4
5
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off
−
State Current
I
II
Gate Trigger Voltage
III
IV
I
SM16GZ47
II
SM16JZ47
III
Gate Trigger
IV
Current
I
SM16GZ47A
II
SM16JZ47A
III
IV
Peak On
−
State Voltage
Gate Non
−
Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of
Off
−
State Voltage
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
Critical Rate of Rise of
Off
−
State Voltage at
Commutation
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
SYMBOL
TEST CONDITION
I
DRM
V
GT
I
GT
V
TM
V
GD
I
H
R
th (j
−
c)
V
DRM
= Rated
T2 (+) , Gate (+)
V
D
= 12V,
R
L
= 20
Ω
T2 (+) , Gate (
−
)
T2 (
−
) , Gate (
−
)
T2 (
−
) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (
−
)
T2 (
−
) , Gate (
−
)
V
D
= 12V,
R
L
= 20
Ω
T2 (
−
) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (
−
)
T2 (
−
) , Gate (
−
)
T2 (
−
) , Gate (+)
I
TM
= 25A
V
D
= Rated, Tc = 125°C
V
D
= 12V, I
TM
= 1A
Junction to Case, AC
dv / dt
V
DRM
= Rated, T
j
= 125°C
Exponential Rise
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
―
―
―
30
―
―
30
―
―
30
―
―
―
mA
―
―
20
―
―
20
―
―
20
―
―
―
―
―
1.5
V
0.2
―
―
V
―
―
50
mA
―
―
2.5 °C / W
―
300
―
V / µs
―
200
―
(dv / dt) c
V
DRM
= 400V, T
j
= 125°C
(di / dt) c =
−
8.7A / ms
10
―
―
V / µs
4
―
―
MARKING
* NUMBER
SYMBOL
*1
Toshiba Product Mark
SM16GZ47, SM16GZ47A
*2
TYPE
SM16JZ47, SM16JZ47A
*3
SM16GZ47A, SM16JZ47A
MARK
M16GZ47
M16JZ47
A
Example
*4
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-13
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