SPI11N65C3 데이터 시트보기 (PDF) - Infineon Technologies
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SPI11N65C3 Datasheet PDF : 15 Pages
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SPP11N65C3,SPA11N65C3
SPI11N65C3
Electrical Characteristics
Parameter
Symbol
Conditions
Transconductance
g fs
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,4)
energy related
Ciss
Coss
Crss
Co(er)
Effective output capacitance,5) Co(tr)
time related
Turn-on delay time
Rise time
Turn-off delay time
td(on)
tr
td(off)
Fall time
tf
VDS≥2*I D*RDS(on)max,
ID=7A
VGS=0V, VDS=25V,
f=1MHz
V GS=0V,
VDS=0V to 480V
VDD=380V, VGS=0/10V,
ID=11A,
RG=6.8Ω
Values
Unit
min. typ. max.
-
8.3
-S
- 1200 - pF
- 390 -
-
30
-
-
45
-
-
85
-
-
10
- ns
-
5
-
-
44 70
-
5
9
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Qgs
VDD =480V, ID =11A
Qgd
Gate charge total
Qg
VDD =480V, ID =11A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD =480V, ID =11A
-
5.5
- nC
-
22
-
-
45 60
-
5.5
-V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.91
Page 3
2009-11-30
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