28F016XS 데이터 시트보기 (PDF) - Intel
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28F016XS Datasheet PDF : 54 Pages
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E
28F016XS FLASH MEMORY
5.5 DC Characteristics (Continued)
VCC = 5.0V ± 5%, TA = 0°C to +70°C
3/5# = Pin Set Low for 5.0V Operations
Symbol
Parameter
Notes Min Typ Max Units
Test Conditions
ICCW
ICCE
ICCES
IPPS
IPPR
IPPD
IPPW
IPPE
IPPES
VIL
VIH
VOL
VOH1
VOH2
VCC Program
1,6
Current
25 35 mA VPP = 12.0V ± 5%
Program in Progress
25 40 mA VPP = 5.0V ± 10%
Program in Progress
VCC Erase
1,6
Suspend Current
18 25 mA VPP = 12.0V ± 5%
Block Erase in Progress
20 30 mA VPP = 5.0V ± 10%
Block Erase in Progress
VCC Block Erase
1,2
Current
5
10
mA CE0#, CE1# = VIH
Block Erase Suspended
VPP Standby/Read
1
± 1 ± 10 µA VPP ≤ VCC
Current
VPP Deep Power-
1
Down Current
30 200 µA VPP > VCC
0.2 5
µA RP# = GND ± 0.2V
VPP Program
1,6
Current
7
12
mA VPP = 12.0V ± 5%
Program in Progress
17 22 mA VPP = 5.0V ± 10%
Program in Progress
VPP Block Erase
1,6
Current
5
10
mA VPP = 12.0V ± 5%
Block Erase in Progress
16 20 mA VPP = 5.0V ± 10%
Block Erase in Progress
VPP Erase
1
Suspend Current
30 200
µA
VPP = VPPH1 or VPPH2
Block Erase Suspended
Input Low Voltage
6
–0.5
0.8
V
Input High Voltage
6
2.0
VCC
V
+0.5
Output Low
Voltage
Output High
Voltage
6
6
0.85
VCC
VCC
–0.4
0.45
V
VCC = VCC Min
IOL = 5.8 mA
V
VCC = VCC Min
IOH = –2.5 mA
VCC = VCC Min
IOH = –100 µA
31
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