TDA8595 데이터 시트보기 (PDF) - NXP Semiconductors.
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TDA8595 Datasheet PDF : 50 Pages
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NXP Semiconductors
TDA8595
I2C-bus controlled 4 × 45 W power amplifier
Table 15. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot
total power dissipation Tcase = 70 °C
-
Vesd
electrostatic discharge human body model;
-
voltage
C = 100 pF; Rs = 1.5 kΩ
machine model;
-
C = 200 pF; Rs = 10 Ω;
Ls = 0.75 µH
Max Unit
80
W
2000 V
200 V
10. Thermal characteristics
Table 16. Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
TDA8595J; TDA8595SD
Rth(j-c)
thermal resistance from junction to case
Rth(j-a)
thermal resistance from junction to ambient in free air
TDA8595TH
1
K/W
40
K/W
Rth(j-c)
Rth(j-a)
thermal resistance from junction to case
thermal resistance from junction to ambient in free air
1
K/W
40
K/W
11. Characteristics
Table 17. Characteristics
Refer to test circuit (see Figure 30) at VP = VP1 = VP2 = 14.4 V; RL = 4 Ω; f = 1 kHz; RS = 0 Ω; normal mode; unless otherwise
specified. Tested at Tamb = 25 °C; guaranteed for Tamb = −40 °C to +105 °C.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Supply voltage behavior
VP
Iq
Istb
VO
VP(low)(mute)
supply voltage
quiescent current
standby current
output voltage
low supply voltage mute
RL = 4 Ω
RL = 2 Ω
no load
VSTB = 0.4 V
with rising supply voltage
with falling supply voltage
8
[1] 8
-
-
6.7
6.9
6.3
14.4 18
V
14.4 16
V
270
400
mA
4
15
µA
7
7.2
V
7.5
8
V
6.8
7.4
V
∆VP(low)(mute) low supply voltage mute
hysteresis
0.1
0.7
1
V
Vth(ovp)
overvoltage protection
threshold voltage
18
20
22
V
Vhr
headroom voltage
when headroom protection is
1.1
1.6
2.0
V
activated; see Figure 8
VPOR
VO(offset)
power-on reset voltage
output offset voltage
see Figure 9
amplifier on
amplifier mute
4.1
5.0
−95
0
−25
0
5.8
V
+95
mV
+25
mV
line driver mode
−40
0
+40
mV
TDA8595_2
Product data sheet
Rev. 02 — 21 November 2007
© NXP B.V. 2007. All rights reserved.
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