4510UUUU 데이터 시트보기 (PDF) - NXP Semiconductors.
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4510UUUU Datasheet PDF : 13 Pages
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NXP Semiconductors
PMEG45U10EPD
45 V, 10 A extremely low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Symbol
V(BR)R
VF
IR
Cd
trr
trr
VFRM
Characteristics
Parameter
Conditions
reverse breakdown
voltage
IR = 5 mA; Tj = 25 °C; tp ≤ 1.2 ms;
δ ≤ 0.12; pulsed
forward voltage
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 3 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
reverse current
VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C;
pulsed
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 45 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 125 °C; pulsed
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
step recovery
Tj = 25 °C
reverse recovery time dIF/dt = 200 A/µs; Tj = 25 °C; IF = 6 A;
ramp recovery
VR = 26 V
peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
voltage
Min Typ Max Unit
45
-
-
V
-
314 360 mV
-
338 -
mV
-
355 -
mV
-
380 430 mV
-
430 490 mV
-
15
-
µA
-
20
50
µA
-
65
-
µA
-
230 600 µA
-
20
-
mA
-
1170 -
pF
-
390 -
pF
-
34
-
ns
-
16
-
ns
-
300 -
mV
PMEG45U10EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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