2SC867 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SC867 Datasheet PDF : 3 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A
VBEsat Base-emitter saturation voltage
IC=1A; IB=0.2 A
ICBO
Collector cut-off current
VCB=400V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=0.1A ; VCE=3V
fT
Transition frequency
IC=0.2A ; VCE=10V
Product Specification
2SC867
MIN TYP. MAX UNIT
150
V
5
V
1.0
V
1.5
V
100 μA
100 μA
50
8
MHz
2
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