Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 500 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 10 A
VDS = 10 V, ID = 10 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
toff
Qg
Qgs
VDD ≈ 400 V, VGS = 10 V, ID = 6 A
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
VDR = 20 A, VGS = 0 V
IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
TOSHIBA
K3117
Part No. (or abbreviation code)
Lot No.
2SK3117
Min Typ. Max Unit
—
—
±10
μA
±30 —
—
V
—
—
100
μA
500 —
—
V
2.0
—
4.0
V
— 0.21 0.27 Ω
10
17
—
S
— 3720 —
— 340 —
pF
— 1165 —
—
30
—
—
70
—
ns
—
50
—
— 290 —
—
80
—
—
48
—
nC
—
32
—
Min Typ. Max Unit
—
—
20
A
—
—
80
A
—
—
−1.7
V
— 540 —
ns
—
5.4
—
μC
2
2006-11-06