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MT48H16M16LFF-8 데이터 시트보기 (PDF) - Micron Technology

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MT48H16M16LFF-8
Micron
Micron Technology Micron
MT48H16M16LFF-8 Datasheet PDF : 58 Pages
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ADVANCE
256Mb: x16
MOBILE SDRAM
CONCURRENT AUTO PRECHARGE
An access command (READ or WRITE) to another
bank while an access command with auto precharge
enabled is executing is not allowed by SDRAMs,
unless the SDRAM supports CONCURRENT AUTO
PRECHARGE. Micron SDRAMs support CONCURRENT
AUTO PRECHARGE. Four cases where CONCURRENT
AUTO PRECHARGE occurs are defined below.
READ with Auto Precharge
1. Interrupted by a READ (with or without auto
precharge): A READ to bank m will interrupt a READ
on bank n, CAS latency later. The PRECHARGE to
bank n will begin when the READ to bank m is regis-
tered (Figure 24).
2. Interrupted by a WRITE (with or without auto
precharge): A WRITE to bank m will interrupt a READ
on bank n when registered. DQM should be used
two clocks prior to the WRITE command to prevent
bus contention. The PRECHARGE to bank n will
begin when the WRITE to bank m is registered (Fig-
ure 25).
Figure 24
READ With Auto Precharge Interrupted by a READ
T0
T1
T2
T3
T4
T5
T6
T7
CLK
COMMAND
NOP
READ - AP
BANK n
NOP
READ - AP
BANK m
NOP
NOP
BANK n
Internal
States
BANK m
Page Active
READ with Burst of 4
Page Active
Interrupt Burst, Precharge
t RP - BANK n
READ with Burst of 4
NOP
NOP
Idle
tRP - BANK m
Precharge
ADDRESS
BANK n,
COL a
BANK m,
COL d
DQ
DOUT
a
DOUT
a+1
DOUT
d
DOUT
d+1
CAS Latency = 3 (BANK n)
NOTE: DQM is LOW.
CAS Latency = 3 (BANK m)
DON’T CARE
Figure 25
READ With Auto Precharge Interrupted by a WRITE
T0
T1
T2
T3
T4
T5
T6
T7
CLK
COMMAND
READ - AP
BANK n
NOP
NOP
BANK n
Page
Active
READ with Burst of 4
Internal
States
BANK m
Page Active
NOP
WRITE - AP
NOP
NOP
BANK m
Interrupt Burst, Precharge
tRP - BANK n
WRITE with Burst of 4
NOP
Idle
t WR - BANK m
Write-Back
ADDRESS
DQM1
BANK n,
COL a
BANK m,
COL d
DQ
DOUT
DIN
a
d
DIN
d+1
CAS Latency = 3 (BANK n)
NOTE: 1. DQM is HIGH at T2 to prevent DOUT-a+1 from contending with DIN-d at T4.
DIN
d+2
DIN
d+3
DON’T CARE
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
26
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.

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