MT48H16M16LFF-8 데이터 시트보기 (PDF) - Micron Technology
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MT48H16M16LFF-8 Datasheet PDF : 58 Pages
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ADVANCE
256Mb: x16
MOBILE SDRAM
T0
CLK
tCK
CKE
tCKS
tCKH
tCMS tCMH
COMMAND
PRECHARGE
DQM /
DQML, DQMU
A0-A9, A11, A12
ALL BANKS
A10
SINGLE BANK
tAS tAH
BA0, BA1
BANK(S)
DQ High-Z
Precharge all
active banks
AUTO REFRESH MODE 1
T1
T2
Tn + 1
((
))
tCL
((
))
tCH
((
((
))
))
((
((
))
))
NOP
tRP
AUTO
REFRESH
((
))
NOP( ( NOP
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
tRFC
AUTO
REFRESH
((
))
NOP( ( NOP
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
tRFC
To + 1
ACTIVE
ROW
ROW
BANK
DON’T CARE
NOTE: 1. Each AUTO REFRESH command performs a refresh cycle. Back-to-back commands are not required.
TIMING PARAMETERS
SYMBOL*
tAH
tAS
tCH
tCL
tCK (3)
tCK (2)
-8
MIN MAX
1
2.5
3
3
8
10
-10
MIN MAX
1
2.5
3
3
10
12
UNITS
ns
ns
ns
ns
ns
ns
*CAS latency indicated in parentheses.
SYMBOL*
tCK (1)
tCKH
tCKS
tCMH
tCMS
tRFC
tRP
-8
MIN MAX
20
1
2.5
1
2.5
80
20
-10
MIN MAX
25
1
2.5
1
2.5
100
20
UNITS
ns
ns
ns
ns
ns
ns
ns
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
41
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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