EM25LV512-25MS 데이터 시트보기 (PDF) - ELAN Microelectronics

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EM25LV512-25MS

512 K (64K x 8) Bits Serial Flash Memory

ELAN Microelectronics 

EM25LV512

512 K (64K x 8) Bits Serial Flash Memory

SPECIFICATION

At Power-up, the device is in the following state:

The device is in the Standby mode (not the Deep Power-Down mode).

The Write Enable Latch (WEL) bit is reset.

At Power-down, when VCC drops from the operating voltage to below the POR threshold value

(VWI), all operations are disabled and the device does not respond to any instruction. If a

Power-down occurs while a Write, Program, or Erase cycle is in progress, some data

corruption may occur.

VCC

VCC(max)

Program, Erase and Write Commands are Rejected by the Device

VCC(min)

VWI

Chip Selection Not Allowed

Reset State of

the Device

tPUW

tVSL

Read Access Allowed

Device Fully

Accessible

time

Figure 4: Power-up Timing

Symbol

VWI

tVSL

tPUW

Parameter

Min

Write Inhibit Voltage

1

VCC(min) to S# low

10

Time Delay to Write Instruction

1

Table 8: Power-Up Timing and VWI Threshold Voltage

Max

2

10

Unit

V

µs

ms

This specification is subject to change without further notice. (11.08.2004 V1.0)

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