HY27SS(08/16)561M 데이터 시트보기 (PDF) - Hynix Semiconductor

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HY27SS(08/16)561M

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory

Hynix Semiconductor 

HY27SS(08/16)561M Series

HY27US(08/16)561M Series

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

MARKING INFORMATION - FBGA

Packag

Marking Example

FBGA

H

Y

x

S

x

x

5

6

1

M

x

x

x

Y

W

W

x

x

K

O

R

- HY27xSxx121mTxB

: Part Number

HY: HYNIX

x: Power Supply

S: Classification

xx: Bit Organization

56: Density

1: Mode

M: Version

x: Package Material

x: Operating Temperature

: U(2.7V~3.6V), S(1.7V~2.2V)

: Single Level Cell+Single Die

: 08(x8), 16(x16)

: 256Mb

: 1nCE & 1R/nB; CE don't care

: 1st Generation

: Blank(Normal), P(Lead Free)

: C(0℃~70℃), E(-25℃~85℃)

I(-40℃~85℃)

x: Bad Block

: B(Included Bad Block), S(1~5 Bad Block),

P(All Good Block)

- Y: Year (ex: 4=year 2004, 05= year 2005)

- ww: Work Week (ex: 12= work week 12)

- xx: Process Code

- Kor

: Origin Country

Note

- Capital Letter

- Small Letter

: Fixed Item

: Non-fixed Item

Rev 0.7 / Oct. 2004

44

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