DIM200MHS17-A000
1000
100
Diode
Transistor
10
1
0.001
IGBT
Diode
1
2
3
4
Ri (˚C/KW) 1.9448 8.7613 46.2922 27.0126
τi (ms)
0.1596 2.2324 39.8386 176.9288
Ri (˚C/KW) 6.1215 19.4376 74.0453 76.4438
τi (ms) 0.0064351 1.3234 31.1756 97.9395
0.01
0.1
1
10
Pulse width, tp - (s)
Fig. 11 Transient thermal impedance
350
300
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
Case temperature, Tcase - (˚C)
Fig. 12 DC current rating vs case temperature
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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