MCF5208CAB166(2006) 데이터 시트보기 (PDF) - Freescale Semiconductor
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MCF5208CAB166 Datasheet PDF : 46 Pages
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Preliminary Electrical Characteristics
NOTES:
1 θJMA and Ψjt parameters are simulated in conformance with EIA/JESD Standard 51-2 for natural convection.
Freescale recommends the use of θJmA and power dissipation specifications in the system design to prevent
device junction temperatures from exceeding the rated specification. System designers should be aware that
device junction temperatures can be significantly influenced by board layout and surrounding devices.
Conformance to the device junction temperature specification can be verified by physical measurement in the
customer’s system using the Ψjt parameter, the device power dissipation, and the method described in
EIA/JESD Standard 51-2.
2 Per JEDEC JESD51-6 with the board horizontal.
3 Thermal resistance between the die and the printed circuit board in conformance with JEDEC JESD51-8. Board
temperature is measured on the top surface of the board near the package.
4 Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL
SPEC-883 Method 1012.1).
5 Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization
parameter is written in conformance with Psi-JT.
The average chip-junction temperature (TJ) in °C can be obtained from:
Where:
TJ = TA + (PD × ΘJMA)
Eqn. 1
TA
= Ambient Temperature, °C
QJMA
= Package Thermal Resistance, Junction-to-Ambient, ×C/W
PD
= PINT + PI/O
PINT
= IDD × IVDD, Watts - Chip Internal Power
PI/O
= Power Dissipation on Input and Output Pins — User Determined
For most applications PI/O < PINT and can be ignored. An approximate relationship between PD and TJ (if
PI/O is neglected) is:
Solving equations 1 and 2 for K gives:
PD = (---T----J---+-----K2---7---3---°---C-----)
Eqn. 2
K
=
PD
×
(TA
×
273°C)
+
QJMA
×
P
2
D
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of TA.
5.3
ESD Protection
Table 6. ESD Protection Characteristics1, 2
Characteristics
ESD Target for Human Body Model
Symbol
HBM
Value
2000
Units
V
MCF5208 ColdFire® Microprocessor Data Sheet, Rev. 0.5
20
Preliminary
Freescale Semiconductor
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