MHV5IC1810NR2 데이터 시트보기 (PDF) - Freescale Semiconductor
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MHV5IC1810NR2 Datasheet PDF : 16 Pages
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TYPICAL CHARACTERISTICS — 1930 - 1990 MHz
10
50
TC = 85_C
EVM
25_C
8
40
−30_C
6
30
4
20
PAE
VDD = 28 Vdc
IDQ1 = 105 mA
2
IDQ2 = 90 mA
10
f = 1960 MHz
EDGE Modulation
0
0
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 13. EVM and Power Added Efficiency
versus Output Power
108
−45
TC = 85_C
−30_C
−50
−55
−60
−65
SR @ 400 kHz
25_C
−30_C
25_C
−70
−75
SR @ 600 kHz
−80
−85
0.1
1
85_C
VDD = 28 Vdc
IDQ1 = 105 mA
IDQ2 = 90 mA
f = 1960 MHz
EDGE Modulation
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 14. Spectral Regrowth at 400 and 600 kHz
versus Output Power
107
2nd Stage
GSM TEST SIGNAL
106
1st Stage
105
104
90 100 110 120 130 140 150 160 170 180 190
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 15. MTTF Factor versus Junction Temperature
−10
Reference Power
−20
−30
−40
−50
−60
−70
400 kHz
−80
600 kHz
−90
−100
−110
Center 1.96 GHz
VBW = 30 kHz
Sweep Time = 70 ms
VBW = 30 kHz
200 kHz
400 kHz
600 kHz
Span 2 MHz
Figure 16. EDGE Spectrum
MHV5IC1810NR2
8
RF Device Data
Freescale Semiconductor
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