MRF1518NT1_06 데이터 시트보기 (PDF) - Freescale Semiconductor

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MRF1518NT1_06

RF Power Field Effect Transistor

Freescale Semiconductor 

Zo = 10 Ω

520 Zin

520

f = 450 MHz

f = 450 MHz ZOL*

Zo = 10 Ω

f = 850 MHz

f = 850 MHz

ZOL*

f = 820 MHz

Zin f = 820 MHz

VDD = 12.5 V, IDQ = 150 mA, Pout = 8 W

f

Zin

MHz

Ω

ZOL*

Ω

450

4.9 +j2.85 6.42 +j3.23

470 4.85 +j3.71 4.59 +j3.61

500 4.63 +j3.84 4.72 +j3.12

520 3.52 +j3.92 3.81 +j3.27

Zin = Complex conjugate of source

impedance with parallel 15 Ω

resistor and 82 pF capacitor in

series with gate. (See Figure 1).

ZOL* = Complex conjugate of the load

impedance at given output power,

voltage, frequency, and ηD > 50 %.

VDD = 12.5 V, IDQ = 150 mA, Pout = 8 W

f

Zin

MHz

Ω

ZOL*

Ω

820 1.42 - j0.32 2.34 +j0.23

830 1.39 - j0.21 2.36 +j0.47

840 1.32 - j0.16 2.40 +j0.69

850 1.23 - j0.13 2.37 +j0.79

Zin = Complex conjugate of source

impedance.

ZOL* = Complex conjugate of the load

impedance at given output power,

voltage, frequency, and ηD > 50 %.

Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.

Input

Matching

Network

Device

Under Test

Output

Matching

Network

Z in

Z OL*

Figure 38. Series Equivalent Input and Output Impedance

MRF1518NT1

12

RF Device Data

Freescale Semiconductor

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