MRF1570T1 데이터 시트보기 (PDF) - Freescale Semiconductor
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MRF1570T1 Datasheet PDF : 20 Pages
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Freescale Semiconductor
Technical Data
Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 470 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 12.5 volt mobile FM equipment.
• Specified Performance @ 470 MHz, 12.5 Volts
Output Power — 70 Watts
Power Gain — 10 dB
Efficiency — 50%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Broadband - Full Power Across the Band: 135 - 175 MHz
400 - 470 MHz
• Broadband Demonstration Amplifier Information Available Upon Request
• 200_C Capable Plastic Package
• Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF1570T1
Rev. 6, 5/2006
MRF1570T1
MRF1570FT1
470 MHz, 70 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1366 - 04, STYLE 1
TO - 272 - 8 WRAP
PLASTIC
MRF1570T1
CASE 1366A - 02, STYLE 1
TO - 272 - 8
PLASTIC
MRF1570FT1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
+0.5, +40
± 20
165
0.5
- 65 to +150
200
Value
0.75
Class
1 (Minimum)
M2 (Minimum)
C2 (Minimum)
Rating
1
Package Peak Temperature
260
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1570T1 MRF1570FT1
1
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