RJP63K2DPK 데이터 시트보기 (PDF) - Renesas Electronics

부품명

상세내역

제조사

RJP63K2DPK

N-Channel IGBT

Renesas Electronics 

RJP63K2DPK-M0

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

ICES

—

Gate to emitter leak current

IGES

—

Gate to emitter cutoff voltage

VGE(off)

2.5

Collector to emitter saturation voltage VCE(sat)

—

Input capacitance

Cies

—

Output capacitance

Coes

—

Reveres transfer capacitance

Cres

—

Total gate charge

Qg

—

Gate to emitter charge

Qge

—

Gate to collector charge

Qgc

—

Switching time

td(on)

—

tr

—

td(off)

—

tf

—

Notes: 3. Pulse test.

Preliminary

Typ

—

—

—

1.9

620

26

11

20

3

7

0.02

0.06

0.05

0.2

Max

1

±100

5

2.4

—

—

—

—

—

—

—

—

—

—

Unit

A

nA

V

V

pF

pF

pF

nC

nC

nC

s

s

s

s

(Ta = 25°C)

Test Conditions

VCE = 630 V, VGE = 0

VGE = ±30 V, VCE = 0

VCE = 10 V, IC = 1 mA

IC = 35 A, VGE = 15 V Note3

VCE = 25 V

VGE = 0

f = 1 MHz

VGE = 15 V

VCE = 300 V

IC = 35 A

IC = 35 A

RL = 8.5 

VGE = 15 V

RG = 5 

R07DS0469EJ0200 Rev.2.00

Jun 15, 2011

Page 2 of 6

Share Link: