S3C2800 데이터 시트보기 (PDF) - Samsung

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S3C2800

32-BIT RISC MICROPROCESSOR

Samsung 

PRELIMINARY DATA SHEET

S3C2800 MICROCONTROLLER

ELECTRICAL DATA

ABSOLUTE MAXIMUM RATINGS

Table 4. Absolute Maximum Rating

Symbol

VDD

VDDP

VIN

VOUT

Ilatch

TSTG

Parameter

1.8V Core DC Supply Voltage

3.3V I/O DC Supply Voltage

DC Input Voltage

DC Output Voltage

Latch-up Current

Storage Temperature

Rating

2.4

3.8

3.3 V Input buffer

3.8

3.3 V Output buffer

3.8

± 200

– 65 to 150

Unit

V

V

V

V

mA

oC

RECOMMENDED OPERATING CONDITIONS

Table 5. Recommended Operating Conditions

Symbol

Parameters

Condition

Min

VDD 1.8V Core DC Supply Voltage Commercial

1.7

VDDP 3.3V I/O DC Supply Voltage Commercial

3.0

VIN DC Input Voltage

3.3V Input buffer

3.0

VOUT DC Output Voltage

3.3V Output buffer

3.0

TOPR Operating Temperature

Commercial

0

IDD Normal operating current (FCLK : HCLK : PCLK = 1: 1/2 : 1/4)

1.8V core supply current FCLK = 200MHz, VDD = 1.95V

–

3.3V I/O supply current FCLK = 200MHz, VDDP = 3.6V

–

IDD1 Idle mode current (FCLK : HCLK : PCLK = 1: 1/2 : 1/4)

1.8V core supply current FCLK = 200MHz, VDD = 1.95V

–

3.3V I/O supply current FCLK = 200MHz, VDDP = 3.6V

–

IDD2 Slow mode current (FCLK : HCLK : PCLK = 1: 1/2 : 1/2)

1.8V core supply current FCLK = 6MHz, VDD = 1.95V

–

3.3V I/O supply current FCLK = 6MHz, VDDP = 3.6V

–

Type

1.8

3.3

3.3

3.3

210

75

75

15

15

5

Max Unit

1.95

V

3.6

V

3.6

V

3.6

V

70

oC

mA

300

110

mA

110

30

mA

30

10

17

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