STD2NK90Z 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

STD2NK90Z

N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET

STMicroelectronics 

STP2NK90Z - STD2NK90Z - STD2NK90Z-1

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VDGR

VGS

ID

ID

IDM (1)

PTOT

Drain-source voltage (VGS = 0)

Drain-gate voltage (RGS = 20 kΩ)

Gate- source Voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

VESD(G-S)

Gate source ESD(HBM-C=100pF,

R=1.5KΩ)

dv/dt (2) Peak diode recovery voltage slope

Tj

Operating junction temperature

Tstg Storage temperature

1. Pulse width limited by safe operating area

2. ISD ≤2.1A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Value

STP2NK90Z

STD2NK90Z

STD2NK90Z-1

900

900

± 30

2.1

1.3

8.4

70

0.56

2000

4.5

-55 to 150

-55 to 150

Unit

V

V

V

A

A

A

W

W/°C

V

V/ns

°C

°C

Table 2. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Tl

Maximum lead temperature for soldering purpose

Table 3. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Value

1.78

62.5

300

Unit

°C/W

°C/W

°C

Value

Unit

2.1

A

150

mJ

3/18

Share Link: