BH0170 데이터 시트보기 (PDF) - Fairchild Semiconductor
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BH0170 Datasheet PDF : 16 Pages
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Electrical Characteristics
VDD=15V and TA=25°C unless otherwise specified.
Symbol
Parameter
SenseFET Section(9)
BVDSS
Drain-Source
Breakdown Voltage
FSBH0x70/A
Condition
VDS = 700V, VGS = 0V
IDSS
RDS(ON)
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
Zero-Gate-Voltage
Drain Current
Drain-Source On-
State Resistance(10)
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
FSBH0x70/A
FSBH0F70A
FSBH0170/A
FSBH0270/A
FSBH0370
FSBH0F70A
FSBH0170/A
FSBH0270/A
FSBH0370
FSBH0F70A
FSBH0170/A
FSBH0270/A
FSBH0370
FSBH0F70A
FSBH0170/A
FSBH0270/A
FSBH0370
FSBH0F70A
FSBH0170/A
FSBH0270/A
FSBH0370
FSBH0F70A
FSBH0170/A
FSBH0270/A
FSBH0370
FSBH0F70A
FSBH0170/A
FSBH0270/A
FSBH0370
FSBH0F70A
FSBH0170/A
FSBH0270/A
FSBH0370
VDS = 700V, VGS = 0V
VDS = 560V, VGS = 0V,
TC = 125°C
VGS = 10V, ID = 0.5A
VGS = 0V, VDS = 25V,
f = 1MHz
VGS = 0V, VDS = 25V,
f = 1MHz
VGS = 0V, VDS = 25V,
f = 1MHz
VDS = 350V, ID = 1.0A
VDS = 350V, ID = 1.0A
VDS = 350V, ID = 1.0A
VDS = 350V, ID = 1.0A
Min. Typ. Max. Unit
700
V
50
μA
200
14.00 19.00
8.80 11.00
Ω
6.00 7.20
4.00 4.75
162
211
250
325
pF
550
715
315
410
18
24
25
33
pF
38
50
47
61
3.8
5.7
10.0 15.0
pF
17.0 26.0
9.0 24.0
9.5 29.0
12.0 34.0
ns
20.0 500.0
11.2 33.0
19
48
4
18
ns
15
40
34
78
33.0 760.0
30.0 70.0
ns
550.0 120.0
28.2 67.0
42
94
10
30
ns
25
60
32
74
Continued on the following page…
© 2009 Fairchild Semiconductor Corporation
FSBH0F70A, FSBH0170/A, FSBH0270/A, FSBH0370 • Rev. 1.0.1
6
www.fairchildsemi.com
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