NXP Semiconductors
BSS84AKW
50 V, 150 mA P-channel Trench MOSFET
-1
ID
(A)
-10-1
-10-2
001aao136
(1)
(2)
(3)
(4)
(5)
-10-3
-10-1
-1
-10
-102
VDS (V)
IDM is single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) tp = 100 ms
(4) DC; Tsp = 25 °C
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
BSS84AKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 May 2011
© NXP B.V. 2011. All rights reserved.
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