BT134W-600E 데이터 시트보기 (PDF) - NXP Semiconductors.
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BT134W-600E Datasheet PDF : 16 Pages
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WeEn Semiconductors
BT134W-600E
4Q Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Tsp ≤ 108 °C; Fig. 1; Fig. 2;
Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
I2t
dIT/dt
I2t for fusing
rate of rise of on-state
current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
tp = 10 ms; SIN
IG = 20 mA
IGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
IG = 50 mA
IG = 20 mA
over any 20 ms period
12
IT(RMS)
(A)
10
aaa-011029
1.2
IT(RMS)
(A)
8
0.8
Min Max Unit
-
600 V
-
1
A
-
10
A
-
11
A
-
0.5 A²s
-
50
A/µs
-
50
A/µs
-
10
A/µs
-
50
A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
125 °C
aaa-011027
108 °C
6
4
0.4
2
0
10-2
10-1
1
10
surge duration (s)
f = 50 Hz; Tsp = 108 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
0
-50
0
50
100
150
Tsp (°C)
Fig. 2. RMS on-state current as a function of solder
point temperature; maximum values
BT134W-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 June 2016
© WeEn Semiconductors Co., Ltd. 2016. All rights reserved
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