2SK1338-E 데이터 시트보기 (PDF) - Renesas Electronics

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2SK1338-E

Silicon N-Channel MOS FET / TO-220AB Package

Renesas Electronics 

2SK1338

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Electrical Characteristics

Symbol

VDSS

VGSS

ID

ID(pulse)*1

IDR

Pch*2

Tch

Tstg

Item

Symbol Min

Typ

Drain to Source breakdown voltage V(BR)DSS 900

—

Gate to Source breakdown voltage V(BR)GSS ±30

—

Gate to Source leak current

IGSS

—

—

Zero Gate voltage Drain current

IDSS

—

—

Gate to Source cutoff voltage

VGS(off)

2.0

—

Static Drain to Source on state

resistance

RDS(on)

—

5.0

Forward transfer admittance

|yfs|

0.9

1.5

Input capacitance

Ciss

—

425

Output capacitance

Coss

—

175

Reverse transfer capacitance

Crss

—

85

Turn-on delay time

td(on)

—

10

Rise time

tr

—

35

Turn-off delay time

td(off)

—

60

Fall time

tf

—

50

Body to Drain diode forward voltage VDF

—

0.9

Body to Drain diode reverse

recovery time

trr

—

700

Note: 3. Pulse test

Ratings

900

±30

2

6

2

50

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

°C

°C

Max

—

—

±10

250

3.0

7.0

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 720 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 1 A, VGS = 10 V *3

S

ID = 1 A, VDS = 20 V *3

pF VDS = 10 V, VGS = 0,

pF f = 1 MHz

pF

ns ID = 1 A, VGS = 10 V,

ns RL = 30 Ω

ns

ns

V IF = 2 A, VGS = 0

ns IF = 2 A, VGS = 0,

diF/dt = 100 A/µs

Rev.2.00 Sep 07, 2005 page 2 of 6

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