100BGQ030 데이터 시트보기 (PDF) - Vishay Semiconductors
부품명
상세내역
제조사
100BGQ030 Datasheet PDF : 6 Pages
| |||
www.vishay.com
VS-100BGQ030
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop
VFM (1)
Reverse leakage current
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
50 A
100 A
TJ = 25 °C
50 A
100 A
TJ = 150 °C
TJ = 125 °C, VR = 15 V
TJ = 150 °C, VR = 30 V
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
Measured from tab to mounting plane
Rated VR
TYP. MAX.
0.47
0.5
0.56
0.63
0.36
0.4
0.49
0.56
80
160
800
1100
0.6
2.4
260
460
3800
3.5
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
TJ, TStg
RthJC
RthCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style PowerTab®
VALUES
-55 to +150
UNITS
°C
0.50
°C/W
0.30
5
g
0.18
oz.
1.2 (10)
2.4 (20)
N·m
(lbf · in)
100BGQ030
1000
100 TJ = 150 °C
10
TJ = 125 °C
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
100
10
1
0.1
150°C
125°C
100°C
75°C
50°C
25°C
0.01
0
5
10 15
20 25 30
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 12-Jun-15
2
Document Number: 94579
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 