SST39LF200A-55-4I-UK 데이터 시트보기 (PDF) - Silicon Storage Technology
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SST39LF200A-55-4I-UK Datasheet PDF : 30 Pages
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2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
Data Sheet
AC CHARACTERISTICS
TABLE 14: READ CYCLE TIMING PARAMETERS VDD = 3.0-3.6V
SST39LF200A/400A-45
SST39LF200A/400A/800A-55
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
45
55
TCE
Chip Enable Access Time
45
55
TAA
Address Access Time
45
55
TOE
Output Enable Access Time
30
30
TCLZ1 CE# Low to Active Output
0
0
TOLZ1 OE# Low to Active Output
0
0
TCHZ1 CE# High to High-Z Output
15
15
TOHZ1 OE# High to High-Z Output
15
15
TOH1
Output Hold from Address Change
0
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
ns
ns
ns
ns
ns
ns
ns
ns
ns
T14.7 360
TABLE 15: READ CYCLE TIMING PARAMETERS VDD= 2.7-3.6V
SST39VF200A/400A/800A-70 SST39VF200A/400A/800A-90
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
70
90
TCE
Chip Enable Access Time
70
90
TAA
Address Access Time
70
90
TOE
Output Enable Access Time
35
45
TCLZ1 CE# Low to Active Output
0
0
TOLZ1 OE# Low to Active Output
0
0
TCHZ1 CE# High to High-Z Output
20
30
TOHZ1 OE# High to High-Z Output
20
30
TOH1
Output Hold from Address Change
0
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
ns
ns
ns
ns
ns
ns
ns
ns
ns
T15.6 360
©2001 Silicon Storage Technology, Inc.
13
S71117-04-000 6/01 360
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