1N65L-TN3-K(2011) 데이터 시트보기 (PDF) - Unisonic Technologies
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1N65L-TN3-K Datasheet PDF : 6 Pages
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1N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
650
V
±30
V
1.2
A
1.2
A
4.8
A
50
mJ
4.0
mJ
4.5
V/ns
SOT-223
1
W
TO-251/ TO-252
28
W
Power Dissipation
TO-220
TO-220F
PD
TO-92(TA=25℃)
40
W
21
W
1
W
TO-126
12.5
W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
℃
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SOT-223
Junction to Ambient
TO-251/ TO-252
TO-220/ TO-220F
TO-92
TO-126
SOT-223
TO-251/ TO-252
Junction to Case
TO-220
TO-220F
TO-126
SYMBOL
θJA
θJc
RATINGS
150
110
62.5
140
132
14
4.53
3.13
5.95
10
UNIT
℃/W
℃/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-579.B
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