1N65L-TF3-K 데이터 시트보기 (PDF) - Unisonic Technologies

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1N65L-TF3-K

1.2A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

1N65

Power MOSFET

 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Forward

Reverse

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

BVDSS

VGS=0V, ID=250μA

IDSS

VDS=650V, VGS=0V

IGSS

VGS=30V, VDS=0V

VGS=-30V, VDS=0V

△BVDSS/△TJ ID=250μA

VGS(TH)

RDS(ON)

VDS=VGS, ID=250μA

VGS=10V, ID=0.6A

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS=25V, VGS=0V,

f=1MHz

SWITCHING CHARACTERISTICS

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

QG

QGS

QGD

tD(ON)

tR

tD(OFF)

tF

VDS=520V, VGS=10V,

ID=1.2A (Note 2,3)

VDD=325V, ID=1.2A,

RG=50Ω (Note 2,3)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS =1.2A

Reverse Recovery Time

trr

VGS=0V, IS=1.2A

Reverse Recovery Charge

Qrr

dIF/dt=100A/μs (Note 1)

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

3. Essentially Independent of Operating Temperature

MIN TYP MAX UNIT

650

V

10 μA

100 nA

-100 nA

0.4

V/°C

2.0

4.0 V

9.5 12.5 Ω

120 150 pF

20 25 pF

3.0 4.0 pF

5.0 6.0 nC

1.0

nC

2.6

nC

5 20 ns

25 60 ns

7 25 ns

25 60 ns

1.2 A

4.8 A

1.4 V

160

ns

0.3

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

4 of 7

QW-R502-579.F

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