20TQ 데이터 시트보기 (PDF) - Vishay Semiconductors

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20TQ

Schottky Rectifier, 20 A

Vishay Semiconductors 

20TQ... Series

Vishay High Power Products Schottky Rectifier, 20 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

See fig. 1

VFM (1)

Maximum reverse leakage curent

See fig. 2

IRM (1)

Maximum junction capacitance

CT

Typical series inductance

LS

Maximum voltage rate of change

dV/dt

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

TEST CONDITIONS

20 A

40 A

TJ = 25 °C

20 A

40 A

TJ = 125 °C

TJ = 25 °C

TJ = 125 °C

VR = Rated VR

VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated VR

VALUES

0.57

0.73

0.51

0.67

2.7

105

1400

8.0

10 000

UNITS

V

mA

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and

storage temperature range

TJ, TStg

Maximum thermal resistance,

junction to case

Typical thermal resistance,

case to heatsink

RthJC

RthCS

DC operation

See fig. 4

Mounting surface, smooth and greased

Approximate weight

Mounting torque

minimum

maximum

Marking device

Case style TO-220AC

VALUES

- 55 to 150

UNITS

°C

1.50

°C/W

0.50

2

g

0.07

oz.

6 (5)

12 (10)

kgf · cm

(lbf · in)

20TQ035

20TQ040

20TQ045

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 93278

Revision: 25-Jun-08

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