28F016SC 데이터 시트보기 (PDF) - Intel
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28F016SC Datasheet PDF : 42 Pages
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BYTE-WIDE SmartVoltage FlashFile™ MEMORY FAMILY
4.1 Read Array Command
Upon initial device power-up and after exit from
deep power-down mode, the device defaults to read
array mode. This operation is also initiated by
writing the Read Array command. The device
remains enabled for reads until another command
is written. Once the internal WSM has started a
block erase, program or lock-bit configuration, the
device will not recognize the Read Array command
until the WSM completes its operation unless the
WSM is suspended via an Erase Suspend or
Program Suspend command. The Read Array
command functions independently of the VPP
voltage and RP# can be VIH or VHH.
4.2 Read Identifier Codes
Command
The identifier code operation is initiated by writing
the Read Identifier Codes command. Following the
command write, read cycles from addresses shown
in Figure 5 retrieve the manufacturer, device, block
lock configuration and master lock configuration
codes (see Table 5 for identifier code values). To
terminate the operation, write another valid
command. Like the Read Array command, the
Read Identifier Codes command functions
independently of the VPP voltage and RP# can be
VIH or VHH. Following the Read Identifier Codes
command, the subsequent information can be read.
Table 5. Identifier Codes
Code
Address Data
Manufacturer Code
000000
89
4 Mbit 000001
A7
Device Code
8 Mbit 000001
A6
16 Mbit 000001 AA
Block Lock Configuration XX0002(1)
• Block Is Unlocked
DQ0 = 0
• Block Is Locked
DQ0 = 1
• Reserved for Future Use
DQ1–7
Master Lock Configuration 000003
• Device Is Unlocked
DQ0 = 0
• Device Is Locked
DQ0 = 1
• Reserved for Future Use
DQ1–7
NOTE:
1. X selects the specific block lock configuration code to
be read. See Figure 6 for the Device Identifier Code
Memory Map.
PRELIMINARY
4.3 Read Status Register
Command
The status register may be read to determine when
a block erase, program, or lock-bit configuration is
complete and whether the operation completed
successfully. It may be read at any time by writing
the Read Status Register command. After writing
this command, all subsequent read operations
output data from the status register until another
valid command is written. The status register
contents are latched on the falling edge of OE# or
CE#, whichever occurs first. OE# or CE# must
toggle to VIH to update the status register latch. The
Read Status Register command functions
independently of the VPP voltage. RP# can be VIH
or VHH.
4.4 Clear Status Register
Command
Status register bits SR.5, SR.4, SR.3, and SR.1 are
set to “1”s by the WSM and can only be reset by
the Clear Status Register command. These bits
indicate various failure conditions (see Table 7). By
allowing system software to reset these bits,
several operations (such as cumulatively erasing or
locking multiple blocks or writing several bytes in
sequence) may be performed. The status register
may be polled to determine if an error occurred
during the sequence.
To clear the status register, the Clear Status
Register command (50H) is written. It functions
independently of the applied VPP voltage. RP# can
be VIH or VHH. This command is not functional
during block erase or program suspend modes.
4.5 Block Erase Command
Erase is executed one block at a time and initiated
by a two-cycle command. A block erase setup is
written first, followed by a block erase confirm. This
command sequence requires appropriate se-
quencing and an address within the block to be
erased (erase changes all block data to FFH).
Block preconditioning, erase, and verify are handled
internally by the WSM (invisible to the system).
After the two-cycle block erase sequence is written,
the device automatically outputs status register
data when read (see Figure 67). The CPU can
detect block erase completion by analyzing the
RY/BY# pin or status register bit SR.7.
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