IRFD210 데이터 시트보기 (PDF) - Intersil
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IRFD210 Datasheet PDF : 6 Pages
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Data Sheet
IRFD210
July 1999 File Number 2316.3
0.6A, 200V, 1.500 Ohm, N-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17442.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD210
HEXDIP
IRFD210
NOTE: When ordering, use the entire part number.
Features
• 0.6A, 200V
• rDS(ON) = 1.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
4-281
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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