2SA1160 데이터 시트보기 (PDF) - Toshiba

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2SA1160

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Toshiba 

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1160

Strobe Flash Applications

Medium Power Amplifier Applications

2SA1160

Unit: mm

• High DC current gain and excellent hFE linearity

: hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A)

: hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)

• Low saturation voltage

: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

DC

Pulsed (Note 1)

Base current

Collector power dissipation

Junction temperature

Storage temperature range

VCBO

VCEO

VEBO

IC

ICP

IB

PC

Tj

Tstg

−20

V

−10

V

−6

V

−2

A

−4

−2

A

900

mW

150

°C

−55 to 150

°C

JEDEC

TO-92MOD

JEITA

―

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)

Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

1

2011-01-18

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