2SB1169 데이터 시트보기 (PDF) - Panasonic Corporation

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2SB1169

Silicon PNP Epitaxial Planar Type

Panasonic Corporation 

Power Transistors

2SB1169, 2SB1169A

Silicon PNP epitaxial planar type

For power amplification

■ Features

• High forward current transfer ratio hFE which has satisfactory linearity

• Low collector-emitter saturation voltage VCE(sat)

• I type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment.

7.0±0.3

3.0±0.2

2.0±0.2

Unit : mm

3.5±0.2

0˚ to 0.15˚

■ Absolute Maximum Ratings TC = 25°C

Parameter

Symbol Rating

Unit

Collector-base voltage 2SB1169 VCBO

−60

V

(Emitter open)

2SB1169A

−80

Collector-emitter voltage 2SB1169 VCEO

−60

V

(Base open)

2SB1169A

−80

Emitter-base voltage (Collector open) VEBO

−5

V

Collector current

IC

−1

A

Peak collector current

ICP

−2

A

Collector power dissipation

PC

15

W

Ta = 25°C

1.3

Junction temperature

Tj

150

°C

Storage temperature

Tstg −55 ∼ +150 °C

1.1±0.1

0.75±0.1 0.4±0.1

2.3±0.2

4.6±0.4

123

0.9±0.1

0˚ to 0.15˚

1: Base

2: Collector

3: Emitter

I-G1 Package

Note) Self-supported type package is also prepared.

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter

Symbol

Conditions

Min Typ Max Unit

Collector-emitter voltage 2SB1169 VCEO IC = −30 mA, IB = 0

−60

V

(Base open)

2SB1169A

−80

Base-emitter voltage

VBE VCE = −4 V, IC = −1 A

Collector-emitter cutoff 2SB1169 ICES VCE = −60 V, VBE = 0

current (E-B short)

2SB1169A

VCE = −80 V, VBE = 0

Collector-emitter cutoff 2SB1169 ICEO VCE = −30 V, IB = 0

current (Base open)

2SB1169A

VCE = −60 V, IB = 0

Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0

Forward current transfer ratio

hFE1 * VCE = −4 V, IC = − 0.2 A

40

hFE2 VCE = −4 V, IC = −1 A

15

Collector-emitter saturation voltage

VCE(sat) IC = −1 A, IB = − 0.125 A

Transition frequency

fT

VCE = −10 V, IC = − 0.5 A, f = 10 MHz

Turn-on time

ton

IC = −1 A, IB1 = −50 mA, IB2 = 50 mA

Strage time

tstg

VCC = −50 V

Fall time

tf

−1.3

V

−200 µA

−200

−300 µA

−300

−1

mA

450



−1

V

40

MHz

0.5

µs

1.2

µs

0.3

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

R

Q

P

O

hFE1

40 to 90

70 to 150 120 to 250 200 to 450

Publication date: April 2003

SJD00045AED

1

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