2SB1169, 2SB1169A
PC Ta
20
(1)TC=Ta
(2)Without heat sink
(PC=1.3W)
15
10
(1)
5
(2)
0
0
40
80
120
160
Ambient temperature Ta (°C)
−2.5
−2.0
−1.5
−1.0
− 0.5
IC VCE
IB=–40mA
–30mA
TC=25˚C
–25mA
–20mA
–10mA
–8mA
–6mA
–4mA
–2mA
0
0 −1 −2 −3 −4 −5 −6
Collector-emitter voltage VCE (V)
IC VBE
−10
VCE=–4V
−8
−6
25˚C
TC=100˚C –25˚C
−4
−2
0
0 − 0.4 − 0.8 −1.2 −1.6 −2.0
Base-emitter voltage VBE (V)
−100
−10
VCE(sat) IC
IC/IB=10
−1
− 0.1
25˚C
TC=100˚C
–25˚C
− 0.01
− 0.01
− 0.1
−1
−10
Collector current IC (A)
hFE IC
104
VCE=–4V
103
TC=100˚C
25˚C
102
–25˚C
10
1
− 0.01
− 0.1
−1
−10
Collector current IC (A)
fT IC
104
VCE=–5V
f=10MHz
TC=25˚C
103
102
10
1
− 0.01
− 0.1
−1
−10
Collector current IC (A)
Safe operation area
−100
103
Non repetitive pulse
TC=25˚C
−10
102
ICP
−1 IC
t=1ms
10
t=10ms
t=300ms
− 0.1
1
Rth t
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
(1)
(2)
− 0.01
−1
10−1
−10
−100
−1 000
10−3
10−2
10−1
Collector-emitter voltage VCE (V)
1
10
Time t (s)
102
103
104
2
SJD00045AED