2SB1155 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SB1155

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB1155

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

-80

V

VCEsat-1 Collector-emitter saturation voltage IC=-7A ;IB=-0.35A

-0.5

V

VCEsat-2 Collector-emitter saturation voltage IC=-15A ;IB=-1.5A

-1.5

V

VBEsat-1 Base-emitter saturation voltage

IC=-7A ;IB=-0.35A

-1.5

V

VBEsat-2 Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-15A ;IB=-1.5A

VCB=-100V; IE=0

VEB=-5V; IC=0

-2.5

V

-10 μA

-50 μA

hFE-1

DC current gain

IC=-0.1A ; VCE=-2V

45

hFE -2

DC current gain

IC=-3A ; VCE=-2V

90

260

hFE -3

DC current gain

IC=-8A ; VCE=-2V

30

fT

Transition frequency

IC=-0.5A ; VCE=-10V;f=10MHz

25

MHz

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-7A ;IB1=-IB2=-0.7A

VCC=-50V

0.5

μs

1.3

μs

0.2

μs

‹ hFE-2 classifications

Q

P

90-180 130-260

2

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