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2SB1161 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SB1161
Silicon PNP Power Transistors
Inchange Semiconductor
2SB1161 Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
CEsat
Collector-emitter saturation voltage I
C
=-8A ;I
B
=-0.8A
V
BE
Base-emitter on voltage
I
C
=-8A ; V
CE
=-5V
I
CBO
Collector cut-off current
V
CB
=-160V; I
E
=0
I
EBO
Emitter cut-off current
V
EB
=-3V; I
C
=0
h
FE-1
DC current gain
I
C
=-20mA ; V
CE
=-5V
h
FE -2
DC current gain
I
C
=-1A ; V
CE
=-5V
h
FE -3
DC current gain
I
C
=-8A ; V
CE
=-5V
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-5V
h
FE-2
classifications
Q
S
P
60-120 80-160 100-200
Product Specification
2SB1161
MIN TYP. MAX UNIT
-2.0
V
-1.8
V
-50
μ
A
-50
μ
A
20
60
200
20
420
pF
20
MHz
2
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