SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1370
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50µA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA; IC=0
VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.2A
ICBO
Collector cut-off current
VCB=-60V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
IC=-0.5A ; VCE=-5V
fT
Transition frequency
IC=-0.5A; VCE=-5V
COB
Collector output capacitance
f=1MHz ; VCB=10V
MIN TYP. MAX UNIT
-60
V
-60
V
-5
V
-1.5
V
-1.5
V
-10 µA
-10 µA
100
320
15
MHz
80
pF
2