2SB939 데이터 시트보기 (PDF) - Panasonic Corporation

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2SB939

Silicon PNP epitaxial planar type Darlington Power Transistors

Panasonic Corporation 

Power Transistors

2SB0939, 2SB0939A (2SB939, 2SB939A)

Silicon PNP epitaxial planar type Darlington

For midium-speed power switching

Complementary to 2SD1262 and 2SD1262A

8.5±0.2

6.0±0.5

Unit: mm

3.4±0.3

1.0±0.1

s Features

q High foward current transfer ratio hFE

q High-speed switching

q N type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

1.5max.

0.8±0.1

1.1max.

0.5max.

s Absolute Maximum Ratings (TC=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to 2SB0939

–60

base voltage 2SB0939A

VCBO

–80

V

Collector to 2SB0939

–60

VCEO

V

emitter voltage 2SB0939A

–80

2.54±0.3

5.08±0.5

123

8.5±0.2

6.0±0.3

1:Base

2:Collector

3:Emitter

N Type Package

Unit: mm

3.4±0.3

1.0±0.1

Emitter to base voltage

VEBO

–7

V

Peak collector current

ICP

–12

A

Collector current

IC

–8

A

Collector power TC=25°C

dissipation

Ta=25°C

PC

45

W

1.3

Junction temperature

Storage temperature

Tj

150

˚C

Tstg

–55 to +150

˚C

s Electrical Characteristics (TC=25˚C)

0.8±0.1

2.54±0.3

5.08±0.5

R0.5

R0.5

1.1 max.

0 to 0.4

123

1:Base

2:Collector

3:Emitter

N Type Package (DS)

Parameter

Symbol

Conditions

min

typ

max Unit

Collector cutoff

current

2SB0939

ICBO

2SB0939A

Emitter cutoff current

Collector to emitter 2SB0939

voltage

2SB0939A

IEBO

VCEO

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

hFE1*

hFE2

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

VCB = –60V, IE = 0

VCB = –80V, IE = 0

VEB = –7V, IC = 0

IC = –30mA, IB = 0

VCE = –3V, IC = –4A

VCE = –3V, IC = –8A

IC = –4A, IB = –8mA

IC = –4A, IB = –8mA

VCE = –10V, IC = – 0.5A, f = 1MHz

IC = –4A, IB1 = –8mA, IB2 = 8mA,

VCC = –50V

–60

–80

2000

500

–100

µA

–100

–2

mA

V

10000

–1.5

V

–2

V

15

MHz

0.5

µs

2

µs

1

µs

*hFE1 Rank classification

Internal Connection

C

Rank

Q

P

B

hFE1 2000 to 5000 4000 to 10000

Note) The part numbers in the parenthesis

E

show conventional part number.

1

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