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2SC2794 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC2794
Silicon NPN Power Transistors
Inchange Semiconductor
2SC2794 Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter breakdown voltage I
C
=10mA; I
B
=0
V
CEsat
Collector-emitter saturation voltage I
C
=1A; I
B
=0.1A
V
BE
Base-emitter on voltage
I
C
=1A ; V
CE
=2V
I
CBO
Collector cut-off current
V
CB
=60V; I
E
=0
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
h
FE-1
DC current gain
I
C
=150mA ; V
CE
=2V
h
FE-2
DC current gain
I
C
=1A ; V
CE
=2V
f
T
Transition frequency
I
C
=100mA; V
CE
=5V
Product Specification
2SC2794
MIN TYP. MAX UNIT
60
V
0.6
V
1.3
V
100
μ
A
1
mA
50
25
40
MHz
2
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