2SC3852 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC3852 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3852
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
60
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
0.5
V
100 μA
100 μA
hFE
DC Current Gain
IC= 0.5A; VCE= 4V
200
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
50
pF
fT
Current-Gain—Bandwidth Product
IE= -0.2A; VCE= 12V
15
MHz
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 1A; IB1= 15mA; IB2= -30mA;
VCC= 20V; RL= 20Ω
0.8
μs
3.0
μs
1.2
μs
isc Website：www.iscsemi.cn
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