2SC4627 데이터 시트보기 (PDF) - Panasonic Corporation
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2SC4627 Datasheet PDF : 4 Pages
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Transistors
2SC4627
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High frequency voltage fT
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
30
V
Collector-emitter voltage (Base open) VCEO
20
V
Emitter-base voltage (Collector open) VEBO
3
V
Collector current
IC
15
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg −55 to +125 °C
0.2+–00..015
3
Unit: mm
0.15+–00..015
1
2
(0.5) (0.5)
1.0±0.1
1.6±0.1
5˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
Marking Symbol: U
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio *
Transition frequency
Common-emitter reverse transfer
capacitance
VCBO IC = 10 µA, IE = 0
30
VEBO IE = 10 µA, IC = 0
3
VBE VCB = 6 V, IE = −1 mA
hFE VCB = 6 V, IE = −1 mA
40
fT
VCB = 6 V, IE = −1 mA, f = 200 MHz 450
Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz
0.72
260
650
0.8
1
V
V
V
MHz
pF
Noise figure
Power gain
NF VCB = 6 V, IE = −1 mA, f = 100 MHz
3.3
dB
GP VCB = 6 V, IE = −1 mA, f = 100 MHz
24
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
B
C
D
hFE
40 to 110
65 to 160 100 to 260
Publication date: January 2003
SJC00162BED
1
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