2SD1005 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SD1005

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SD1005

TRANSISTOR (NPN)

FEATURES

z Small Flat Package

z High Breakdown Voltage

z Excellent DC Current Gain Linearity

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

100

80

5

1

500

250

150

-55~+150

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

*Pulse test

CLASSIFICATION OF hFE（1）

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)*

hFE(2)*

VCE(sat)*

VBE(sat)*

VBE*

fT

Cob

Test conditions

IC=0.1mA,IE=0

IC=1mA,IB=0

IE=0.1mA,IC=0

VCB=100V,IE=0

VEB=5V,IC=0

VCE=2V, IC=100mA

VCE=2V, IC=500mA

IC=500mA,IB=50mA

IC=500mA,IB=50mA

VCE=10V, IC=10mA

VCE=5V,IC=10mA

VCB=10V, IE=0, f=1MHz

Min Typ Max Unit

100

V

80

V

5

V

0.1

µA

0.1

µA

90

400

25

0.5

V

1.5

V

0.6

0.7

V

160

MHz

12

pF

RANK

RANGE

MARKING

W

90–180

BW

V

135–270

BV

U

200–400

BU

１　

JinYu

semiconductor

www.htsemi.com

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